CAPACITOR STRUCTURE
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United States of America Patent
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app pub date -
Dec 4, 2013
filing date -
Jan 31, 2011
priority date (Note) -
Abandoned
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Abstract
A DRAM capacitor structure is disposed on the interior surface of a vertical hollow cylinder of a support structure overlying a semiconductor substrate. The support structure further includes a horizontal supporting layer that is integrally connected with the vertical hollow cylinder. A fabrication method for forming the DRAM capacitor structure is also provided.
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