SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

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United States of America Patent

APP PUB NO 20140084378A1
SERIAL NO

14033842

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Provided is a constant voltage circuit having a stable output voltage. In a constant voltage circuit formed by connecting an enhancement type NMOS and a depression type NMOS in series, in order to enhance the back bias effect of the depression type NMOS, the impurity concentration is set to be high only in a P-type well region on which the depression type NMOS is arranged.

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Patent Owner(s)

Patent OwnerAddress
SII SEMICONDUCTOR CORPORATION8 NAKASE 1-CHOME MIHAMA-KU CHIBA-SHI CHIBA 261-8507

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HARADA, Hirofumi Chiba, JP 59 448
HASHITANI, Masayuki Chiba, JP 14 30

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