COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20140084345A1
SERIAL NO

14030172

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Abstract

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A compound semiconductor device includes: a compound semiconductor stacked structure; a source electrode and a drain electrode formed separately from each other above the compound semiconductor stacked structure; a gate electrode formed between the source electrode and the drain electrode above the compound semiconductor stacked structure; and a passivation film formed above the compound semiconductor stacked structure and made of an insulating material containing Al, in which the passivation film is in a non-contact state with the compound semiconductor stacked structure under the source electrode and the drain electrode.

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Patent Owner(s)

Patent OwnerAddress
TRANSPHORM JAPAN INCSHIN-YOKOHAMA CENTER BLDG 9F 2-5-15 SHIN-YOKOHAMA KOHOKU-KU YOKOHAMA KANAGAWA 222-0033

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ohki, Toshihiro Hadano, JP 63 1380
SATOU, YUUICHI AIZUWAKAMATU, JP 16 219

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