METHOD FOR IN SITU CLEANING OF MOCVD REACTION CHAMBER
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United States of America Patent
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Issued Date -
Mar 27, 2014
app pub date -
Sep 19, 2013
filing date -
Sep 26, 2012
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Abandoned
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Abstract
A method for in situ cleaning of a Metal-Organic Chemical Vapor Deposition reaction chamber is provided in embodiments of the present invention. The method includes: introducing a first cleaning gas into the reaction chamber, converting the first cleaning gas into first plasma inside the reaction chamber to completely remove a carbonaceous organic substance inside the reaction chamber, wherein the first cleaning gas includes a first oxygen-containing gas; and introducing a second cleaning gas into the reaction chamber, and converting the second cleaning gas into second plasma inside the reaction chamber to completely remove a metallic oxide inside the reaction chamber, wherein the second cleaning gas includes a first halogen-containing gas.
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