METHOD FOR IN SITU CLEANING OF MOCVD REACTION CHAMBER
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United States of America Patent
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Issued Date -
Mar 27, 2014
app pub date -
Sep 19, 2013
filing date -
Sep 26, 2012
priority date (Note) -
Abandoned
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Abstract
The present invention provides a method for in situ cleaning of an MOCVD reaction chamber. The method includes: maintaining the internal pressure of the MOCVD reaction chamber in a predetermined pressure range, and keeping a plasma inside the MOCVD reaction chamber for a predetermined time period to completely remove deposits inside the MOCVD reaction chamber. The method for in situ cleaning of an MOCVD reaction chamber according to the embodiments of the present invention may remove relatively stable organic ligands or related polymers, resulting in a good cleaning effect for the removal of the deposits on the surfaces with a relatively low temperature inside the MOCVD reaction chamber.
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