LIFT-OFF PROCESSING FOR FORMATION OF ISOLATION REGIONS IN LASER DIODE STRUCTURES
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United States of America Patent
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Issued Date -
Mar 20, 2014
app pub date -
May 22, 2012
filing date -
May 27, 2011
priority date (Note) -
Abandoned
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Abstract
A method of fabricating a laser diode structure is provided where a photolithographic process is utilized to form at least a portion of an axially extending waveguide structure such that a patterned photoresist remnant resides over the axially extending waveguide structure following the photolithographic process. A patterned isolated opening and a lift-off photoresist portion are formed in the patterned photoresist remnant by subjecting the patterned photoresist remnant to an additional photolithographic process such that the lift-off photoresist portion remains in residence over the axially extending waveguide structure following the additional photolithographic process. An insulating layer is formed over the patterned isolated opening and the lift-off photoresist portion.
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