Trench MOSFET having an independent coupled element in a trench
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 7, 2015
Issued Date -
N/A
app pub date -
Sep 14, 2012
filing date -
Sep 14, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Loading Importance Indicators... 
Abstract
A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive element. The conductive element, like the gate is contained in the trench, and extends between the gate and a bottom of the trench. The conductive element is electrically isolated from the source, the gate, and the drain. When employed in a device such as a DC-DC converter, the trench MOSFET may reduce power losses and electrical and electromagnetic noise.
First Claim
Other Claims data not available
Family
Loading Family data...
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H03K Class
- 0 % this patent is cited more than
- 10 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Oct 7, 2026 |
