NITRIDE SEMICONDUCTOR DEVICE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Nov 22, 2013
filing date -
Jul 25, 1997
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Loading Importance Indicators... 
Abstract
A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×1010 cm3, and the resistivity can be lowered below 8×10−3 Ωcm.
First Claim
Other Claims data not available