Importance

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Abstract

A diode includes: a first semiconductor layer of a first conductive type; a second semiconductor layer of a second conductive type arranged adjoining to the first semiconductor layer; a third semiconductor layer of the first conductive type arranged on a side, opposite to the second semiconductor layer, of the first semiconductor layer, and contains a dopant of the first conductive type at a higher concentration than the first semiconductor layer; a first electrode ohmically connected to the second semiconductor layer; a second electrode ohmically connected to the third semiconductor layer; and a fourth semiconductor layer arranged at a position adjoining to the third semiconductor layer between the first and third semiconductor layers, contains a dopant of a type being the same as a type of the dopant of the first conductive type contained in the third semiconductor layer, and has a carrier lifetime shorter than the third semiconductor layer.

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First Claim