SEMICONDUCTOR MEMORY ARRAY STRUCTURE
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United States of America Patent
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Issued Date -
Mar 13, 2014
app pub date -
Sep 13, 2012
filing date -
Sep 13, 2012
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Abstract
A memory array includes a rhomboid-shaped AA region surrounded by a first and second STI structures. The first STI structure extends along a first direction on the longer sides of the rhomboid-shaped AA region and has a depth d1. The second STI structure extends along the second direction on the shorter sides of the rhomboid-shaped AA region and has two depths: d2 and d3, wherein d1 and d2 are shallower than d3.
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