TEMPERATURE CONTROL OF SEMICONDUCTOR PROCESSING CHAMBERS BY MODULATING PLASMA GENERATION ENERGY
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United States of America Patent
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Issued Date -
Mar 13, 2014
app pub date -
Sep 10, 2012
filing date -
Sep 10, 2012
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Abandoned
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Abstract
Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system that regulates the amount of thermal energy in a semiconductor processing chamber during semiconductor device fabrication and processes. In one embodiment, an apparatus includes a cavity environment controller and a pedestal temperature controller coupled to a semiconductor processing chamber. The pedestal temperature controller is configured to regulate the temperature of the semiconductor processing chamber through a pedestal disposed at the bottom of the semiconductor processing chamber.
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