Amino Vinylsilane Precursors for Stressed SiN Films

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United States of America Patent

APP PUB NO 20140065844A1
SERIAL NO

14070957

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The present invention is a method to increase the intrinsic compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor. More specifically the present invention uses the amino vinylsilane-based precursor selected from the formula: [RR1N]xSiR3y(R2)z, where x+y+z=4, x=1-3, y=0-2, and z=1-3; R, R1 and R3 can be hydrogen, C1 to C10 alkane, alkene, or C4 to C12 aromatic; each R2 is a vinyl, allyl or vinyl-containing functional group.

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VERSUM MATERIALS US LLC8555 SOUTH RIVER PARKWAY PATENT DEPT TEMPE AS 85284

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Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2013201420152016201720182019202020212022202320240255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Johnson, Andrew David Doylestown, US 56 1399
Vorsa, Vasil Coopersburg, US 13 295
Xiao, Manchao San Diego, US 139 13591

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