COOLING SUBSTRATE AND ATOMIC LAYER DEPOSITION APPARATUS USING PURGE GAS

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United States of America Patent

APP PUB NO 20140065307A1
SERIAL NO

13966103

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Cooling a heated substrate undergoing a deposition process (e.g., ALD, MLD or CVD) and a deposition reactor for performing the deposition process by routing a cooled purge gas through a path in the deposition reactor and then injecting the cooled purge gas onto the substrate. The deposition reactor may include a heater to heat precursor. As the precursor passes the heater, the precursor is heated to a temperature conducive to the deposition process. As a result of operating the heater and routing the heated precursor, the temperature of the substrate and the deposition reactor may be increased. To drop the temperature of the substrate and the deposition reactor, a purge gas cooled to a temperature lower than the heated precursor is injected onto the substrate via the deposition reactor

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Patent Owner(s)

Patent OwnerAddress
VEECO ALD INC3191 LAURELVIEW COURT FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Sang In Sunnyvale, US 99 6600

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