Method and Apparatus for a Large Area Inductive Plasma Source
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United States of America Patent
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Issued Date -
Mar 6, 2014
app pub date -
Aug 29, 2012
filing date -
Aug 29, 2012
priority date (Note) -
Abandoned
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Abstract
A plasma source for providing dissociated gas to semiconductor process chamber is provided. The plasma chamber can have at least one gas inlet and at least one chamber wall for containing the gas, a plurality of magnetic cores disposed relative to the plasma chamber such that the plasma chamber passes through each of the plurality of magnetic cores. A primary winding can be coupled to the plurality of magnetic cores. The plasma chamber can generate a toroidal plasma along a plane extending through the plasma chamber and which is at least substantially parallel to a top surface of a sample holder disposed within the semiconductor process chamber.
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