RELIABLE NANOFET BIOSENSOR PROCESS WITH HIGH-K DIELECTRIC

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United States of America Patent

APP PUB NO 20140054651A1
SERIAL NO

13992217

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Provided are semiconductor field effect sensors including a high-k thin film gate dielectric. The semiconductor field effect sensors described herein exhibit high detection sensitivity and enhanced reliability when placed in contact with liquids. Also disclosed are semiconductor field effect sensors having optimized fluid gate electrode voltages and/or back gate electrode voltages for improved detection sensitivity.

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Patent Owner(s)

Patent OwnerAddress
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS352 HENRY ADMINISTRATION BUILDING 506 S WRIGHT ST URBANA IL 61801

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bashir, Rashid Champaign, US 79 2503
Dorvel, Brian Ross Champaign, US 1 12
Reddy, Bobby Savoy, US 4 186

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