MEMORY ADDRESS TRANSLATION METHOD FOR FLASH STORAGE SYSTEM

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United States of America Patent

APP PUB NO 20140052899A1
SERIAL NO

13589124

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Abstract

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A memory address translation method for flash storage system is disclosed. There are two level mapping tables to reduce overhead of mapping table management. In level-one mapping table, each entry contains two kinds of information, which one is the validation of this entry, called Valid Mark and the other is the location of level-two mapping. The level-one mapping table is always located on RAM, and never saved into flash memory. In level-two mapping table, each entry contains two kinds of information, which one is the validation of this entry and the other is the physical location of data in flash memory. The physical addresses of both data and level-two mapping table are dynamically determined. Level-two mapping table is loaded to RAM when it is needed to reference, and is saved into flash memory periodically if the content is updated.

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Patent Owner(s)

Patent OwnerAddress
STORART TECHNOLOGY(SHENZHEN) CO LTD1005 BLOCK B FU AN SCIENCE AND TECHNOLOGY BUILDING GAOXIN 1ST ROAD SOUTH YUEHAI SUB-DISTRICT SCIENCE AND TECHNOLOGY PARK SOUTH ZONE NANSHAN DISTRICT SHENZHEN GUANGDONG PROVINCE

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Inventor Name Address # of filed Patents Total Citations
Nan, Yen Chih Hsinchu City, TW 4 51

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