METAL-OXIDE-METAL CAPACITOR ABLE TO REDUCE AREA OF CAPACITOR ARRAYS

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United States of America Patent

APP PUB NO 20140049872A1
SERIAL NO

13587319

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Abstract

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A metal-oxide-metal (MOM) capacitor able to reduce area of capacitor arrays is revealed. The MOM capacitor mainly includes at least three parallel conducting layers. Each parallel conducting layer consists of a first conductive plate, a second conductive plate disposed around the first conductive plate. There is a preset distance between the first conductive plate and the second conductive plate. The first conductive plates are electrically connected by at least one first via while the second conductive plates are electrically connected by at least one second via. Thereby, while being applied to capacitor arrays, the second conductive plates of the two adjacent MOM capacitors are connected together and shared with each other, so as to significantly reduce area of the capacitor array, improve circuit density and further optimize the layout efficiency of the chip design.

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Patent Owner(s)

Patent OwnerAddress
HIMAX TECHNOLOGIES LIMITEDNO 26 ZIH LIAN ROAD FONGHUA VILLAGE XINSHI DIST TAINAN CITY
NCKU RESEARCH AND DEVELOPMENT FOUNDATIONNO 1 UNIVERSITY ROAD TAINAN CITY 701

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Guan-Ying Tainan, TW 15 140
Lin, Jin-Fu Tainan, TW 19 246

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