METHOD OF FABRICATION OF SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Feb 13, 2014
app pub date -
Jul 11, 2011
filing date -
Jul 21, 2010
priority date (Note) -
Abandoned
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Abstract
The invention relates to a method of fabricating a semiconductor device, the method including: providing a stacked semiconductor structure having a substrate, a buffer layer and one or more device layers; depositing a layer of AlSb on one or more regions of the upper surface of the stacked structure; and oxidising the AlSb layer in the presence of water to form a layer of aluminium oxide on the one or more regions of the upper surface. The semiconductor device is preferably a field effect transistor, and the method preferably includes the additional step of depositing source, drain and/or gate electrodes. In preferred embodiments, the method is controlled so as to avoid exposing the intermediate AlSb structure to the atmosphere and/or the oxidation step is conducted at a temperature between 100° and 300° C.
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