VERTICAL LIGHT EMITTING DIODE AND MANUFACTURING METHOD AND APPLICATION THEREOF
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United States of America Patent
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Issued Date -
Feb 13, 2014
app pub date -
Mar 15, 2013
filing date -
Sep 21, 2010
priority date (Note) -
Abandoned
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Abstract
A vertical light emitting diode (LED) is disclosed, which includes a conductive substrate; a conductive diamond-like carbon (DLC) layer located on the conductive substrate; a first passivation layer disposed on the conductive DLC layer and formed with a first opening; a first electrode located on the conductive DLC layer and in the first opening of the first passivation layer; a semiconductor epitaxial multilayer structure disposed on the first electrode; a second passivation layer disposed on the first passivation layer and covering the lateral surface of the semiconductor epitaxial multilayer structure, wherein a second opening is formed in the second passivation layer to expose the surface of the semiconductor epitaxial multilayer structure; and a second electrode located on the semiconductor epitaxial multilayer structure and in the second opening of the second passivation layer. A method for manufacturing the vertical LED mentioned above is also disclosed.
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