Method and system for ion-assisted processing
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United States of America Patent
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May 20, 2014
Grant Date -
Feb 6, 2014
app pub date -
Jul 31, 2012
filing date -
Jul 31, 2012
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Abstract
A method of processing a substrate includes performing a first exposure that comprises generating a plasma containing reactive gas ions in a plasma chamber and generating a bias voltage between the substrate and the plasma chamber. The method also includes providing a plasma sheath modifier having an aperture disposed between the plasma and substrate and operable to direct the reactive gas ions toward the substrate, and establishing a pressure differential between the plasma chamber and substrate region while the reactive gas ions are directed onto the substrate.
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