EPITAXIAL GROWTH ON THIN LAMINA
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United States of America Patent
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app pub date -
Aug 1, 2013
filing date -
Aug 2, 2012
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Abstract
Methods and apparatus are provided for forming an electronic device from a lamina and an epitaxially grown semiconductor material. The method includes providing a donor body comprising a top surface, epitaxially growing a semiconductor material on the top surface and implanting the top surface of the donor body with an ion dosage to form a cleave plane. After implantation, a lamina may be exfoliated from the donor body, wherein the top surface of the donor body becomes a first surface of the lamina. Exfoliating the lamina forms a second surface of the lamina, wherein the first surface is opposite the second surface. A metal support may be constructed on the lamina.
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