APPARATUS AND METHOD FOR MEASURING THE DIMENSIONS OF 1-DIMENSIONAL AND 0-DIMENSIONAL NANOSTRUCTURES IN REAL-TIME DURING EPITAXIAL GROWTH
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United States of America Patent
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Feb 6, 2014
app pub date -
Aug 2, 2013
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Aug 2, 2012
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Abstract
The present invention relates to an apparatus and a method for measuring the dimensions of 1-dimensional and 0-dimensional nanostructures on semiconductor substrates in real-time during epitaxial growth. The method includes either assigning a pre-calculated 3D-model from a data base to the sample or calculating a 3D-model of the sample using the measured optical reflectances of the plurality of different measuring positions of the sample, where calculation or pre-calculation of the 3D-model includes calculation of the interference effects of light reflected from the front and back interfaces of the nano-structure and calculation of the interference effects due to superposition of neighbouring wave-fronts reflected from the nano-structure area and wave-fronts reflected from the substrate area between the nano-structures.
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