SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR STRUCTURE THEREOF
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United States of America Patent
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Issued Date -
Feb 6, 2014
app pub date -
Jul 31, 2012
filing date -
Jul 31, 2012
priority date (Note) -
Abandoned
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Abstract
A semiconductor manufacturing method includes providing a substrate having a metallic layer that includes a first metal layer and a second metal layer, the first metal layer comprises plural base areas and plural first outer lateral areas, the second metal layer comprises plural second base areas and plural second outer lateral areas; forming a first photoresist layer; forming plural bearing portions; removing the first photoresist layer; forming a second photoresist layer; forming plural connection portions, each connection portion comprises a first connection layer and a second connection layer; removing the second photoresist layer to reveal the connection portions and the bearing portions; removing the first outer lateral areas; reflowing the second connection layers to form plural composite bumps; removing the second outer lateral areas to make the first base areas and the second base areas form plural under bump metallurgy layers.
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