FIELD EFFECT TRANSISTOR HAVING A TROUGH CHANNEL
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United States of America Patent
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Issued Date -
Feb 6, 2014
app pub date -
Oct 1, 2013
filing date -
Jun 4, 2011
priority date (Note) -
Abandoned
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Abstract
The present invention is directed to a field effect transistor having a trough channel structure. The transistor comprises a semiconductor substrate of a first conductivity type having a trough structure therein with the trough structure extending along a first direction; an insulating layer formed on top of the trough structure; a gate formed on top of the insulator layer in a second direction perpendicular to the first direction and extending over and into the trough structure with a gate dielectric layer interposed therebetween; a source and a drain of a second conductivity type opposite to the first conductivity type formed in the trough structure on opposite sides of the gate.
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