Asymmetric Gate MOS Device and Method of Making
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United States of America Patent
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Issued Date -
Feb 6, 2014
app pub date -
Oct 31, 2011
filing date -
Apr 26, 2011
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Abandoned
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Abstract
An asymetric gate MOS device is disclosed. The gate is a metal gate, and the metal gate has a different work function on the source side from that on the drain side of the MOS device, so that the overall performance parameters of the MOS device are more optimized. A method of making an asymetric gate MOS device is also disclosed. In the method, dopant ions are implanted into the gate of the MOS device, so as to cause the gate to have a different work function on the source side from that on the drain side of the MOS device. As a result, the overall performance parameters of the MOS device are more optimized. The method can be easily implemented.
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