LED epitaxial Structure
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United States of America Patent
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Issued Date -
Feb 6, 2014
app pub date -
Sep 12, 2012
filing date -
Aug 3, 2012
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Abandoned
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Abstract
An LED epitaxial structure includes the first layer thin film and the second layer thin film. The first layer thin film and the second layer thin film are polycrystalline aluminum nitride and single crystal aluminum nitride respectively, which have good thermal conductivity, insulation, mechanical intensity, and chemistry stability. Based on the substrate mentioned above, growing a single crystal gallium nitride on the second layer thin film as the third layer thin film allows the single crystal aluminum nitride and gallium nitride to have good lattice and thermal expansion match, resulting in the promotion of light emitting and thermal conduction efficiency.
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