Controlled Doping Device For Single Crystal Semiconductor Material and Related Methods
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United States of America Patent
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Issued Date -
Feb 6, 2014
app pub date -
Jul 31, 2012
filing date -
Jul 31, 2012
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Abandoned
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Abstract
A doping device for a furnace containing a melt includes an upper chamber configured to hold solid dopant particles, a lower chamber, and a feeding tube coupled between the upper chamber and the lower chamber. The feeding tube is configured to supply dopant gas from the upper chamber to the lower chamber, and the lower chamber is configured to diffuse dopant gas over a top surface of the melt.
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