HIGH PRESSURE, HIGH POWER PLASMA ACTIVATED CONFORMAL FILM DEPOSITION

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United States of America Patent

APP PUB NO 20140030444A1
SERIAL NO

13953616

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Methods and apparatus for depositing a film on a substrate surface including plasma assisted surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction are provided. The embodiments disclosed herein relate to methods and apparatus for performing conformal film deposition and atomic layer deposition reactions that result in highly uniform films with low particle contamination. According to various embodiments, the methods and apparatus involve high deposition chamber pressures and plasma generation using high radio frequency powers.

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Patent Owner(s)

Patent OwnerAddress
NOVELLUS SYSTEMS INC4650 CUSHING PARKWAY FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lavoie, Adrien Tualatin, US 198 18204
Leeser, Karl West Linn, US 61 3854
Pasquale, Frank Tualatin, US 16 1046
Swaminathan, Shankar Hillsboro, US 111 12669

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