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United States of America Patent
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Issued Date -
Jan 30, 2014
app pub date -
Jul 17, 2013
filing date -
Jul 17, 2012
priority date (Note) -
Abandoned
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Abstract
An embodiment of a MOS transistor includes a layer of semiconductor material, drain regions having a first conductivity type alternately formed in the layer with body regions having a second conductivity type, a first insulating layer disposed over the surface of the layer of semiconductor material, at least one gate-precursor region of conductive material disposed over the first insulating layer, a second insulating layer disposed over the first insulating layer and the gate-precursor region, a third insulating layer disposed over the second insulating layer, at least one source opening formed by removing overlapping portions of the second insulating layer, the third insulating layer, the gate-precursor region, and by at least partially removing a corresponding portion of the first insulating layer. The embodiment may also include at least one source-precursor region extending into the layer of semiconductor material from a surface portion below the at least one source opening.
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