SEMICONDUCTOR LAMINATE AND PROCESS FOR PRODUCTION THEREOF, AND SEMICONDUCTOR ELEMENT
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United States of America Patent
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Issued Date -
Jan 30, 2014
app pub date -
Apr 3, 2012
filing date -
Apr 8, 2011
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Abandoned
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Abstract
A semiconductor laminate having small electric resistivity in the thickness direction; a process for producing the semiconductor laminate; and a semiconductor element equipped with the semiconductor laminate. include a semiconductor laminate including a Ga203 substrate; an AlGalnN buffer layer which is formed on the Ga203 substrate; a nitride semiconductor layer which is formed on the AlGalnN buffer layer and contains Si; and an Si-rich region which is formed in an area located on the AlGalnN buffer layer side in the nitride semiconductor layer and has an Si concentration of 5×1018/cm3 or more.
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