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Abstract

A quantum well thermoelectric component for use in a thermoelectric device based on the thermoelectric effect,

comprising a stack of layers of two materials respectively made on the basis of silicon and silicon-germanium,the first of the two materials, made on the basis of silicon, defining a barrier semiconductor material andthe second of the two materials, made on the basis of silicon-germanium, defining a conducting semiconductor material,the barrier semiconductor material having a band gap higher than the band gap of the conducting semiconductor material, whereinthe conducting semiconductor material is an alloy comprising silicon, germanium and at least a lattice-matching element, the lattice-matching element(s) being present in order to control a lattice parameter mismatch between the barrier layer made of the barrier semiconductor material and the conducting layer made of the conducting semiconductor material.

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First Claim