Dual storage node memory
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United States of America Patent
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Oct 4, 2016
Grant Date -
Jan 23, 2014
app pub date -
Sep 20, 2013
filing date -
Feb 3, 2006
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Abstract
An embodiment of the present invention is directed to a memory cell. The memory cell includes a first charge storage element and a second charge storage element, wherein the first and second charge storage elements include nitrides. The memory cell further includes an insulating layer formed between the first and second charge storage elements. The insulating layer provides insulation between the first and second charge storage elements.
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