FLASH MEMORY DEVICE WITH WORD LINES OF UNIFORM WIDTH AND METHOD FOR MANUFACTURING THEREOF
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United States of America Patent
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app pub date -
Oct 22, 2012
filing date -
Jul 30, 2007
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Abandoned
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Abstract
A method for manufacturing a semiconductor device, the method including: forming a bit line in a semiconductor substrate; forming a plurality of word lines which intersect with the bit line at predetermined intervals on the semiconductor substrate; eliminating a portion of the plurality of word lines; forming an interlayer insulating film on the semiconductor substrate; and forming a metal plug which penetrates through the interlayer insulating film and is coupled to the bit line in a region where the portion of the plurality of word lines was eliminated.
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