USING AMORPHOUS ZINC-TIN OXIDE ALLOYS IN THE EMITTER STRUCTURE OF CIGS PV DEVICES
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app pub date -
Jan 3, 2013
filing date -
Jan 3, 2012
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Abstract
A device includes a back contact, an absorber layer coupled to the back contact, a buffer layer coupled to the absorber layer; and an amorphous transparent conductive layer coupled to the buffer layer, wherein the amorphous transparent conductive phase is characterized by, as a function of composition, i) a range of band gaps and ii) a range of work functions.
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