METHOD OF MANUFACTURING SINGLE CRYSTAL INGOT, AND SINGLE CRYSTAL INGOT AND WAFER MANUFACTURED THEREBY
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United States of America Patent
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Issued Date -
Jan 16, 2014
app pub date -
Mar 20, 2012
filing date -
Mar 28, 2011
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Abandoned
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Abstract
A method of manufacturing a single crystal ingot, and a single crystal ingot and a wafer manufactured thereby are provided. The method of manufacturing a single crystal ingot according to an embodiment includes forming a silicon melt in a crucible inside a chamber, preparing a seed crystal on the silicon melt, and growing a single crystal ingot from the silicon melt, and pressure of the chamber may be controlled in a range of 90 Torr to 500 Torr.
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