THIN-FILM TRANSISTOR, ELECTRONIC CIRCUIT, DISPLAY AND METHOD OF MANUFACTURING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jan 16, 2014
app pub date -
Jul 12, 2012
filing date -
Jul 12, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A bottom gate bottom contact thin-film transistor including a gate electrode, a source electrode, a drain electrode, a dielectric layer and a semiconductor layer of a semiconducting oxide is disclosed. The dielectric layer is arranged between the gate electrode and the semiconductor layer structure, and the source electrode and the drain electrode are covered with said semiconductor layer structure. The source electrode and the drain electrode include at least a first electrode portion of an oxygen reducing material, and a second electrode portion of an additional material different from said oxygen reducing material wherein the second electrode portion of the drain at a side facing the source exposes to said semiconductor layer structure at least a surface portion of a main surface of its first electrode portion facing away from the dielectric layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully