PHOTORESIST-FREE METAL DEPOSITION
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United States of America Patent
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Issued Date -
Jan 16, 2014
app pub date -
Jul 23, 2013
filing date -
Jul 21, 2006
priority date (Note) -
Abandoned
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Abstract
Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.
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