Method of Making Metal/Semiconductor Compound Thin Film
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United States of America Patent
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Issued Date -
Jan 9, 2014
app pub date -
Sep 28, 2011
filing date -
Mar 17, 2011
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Abandoned
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Abstract
The present disclosure provides a method of making metal/semiconductor compound thin films, in which a target material is partially ionized into an ionic state during metal deposition using a PVD process, so as to produce metal ions, and in which a substrate bias voltage is applied to a semiconductor substrate, causing the metal ions to accelerate into the semiconductor substrate and enter the semiconductor substrate, resulting in more metal ions diffusing to the surface of the semiconductor substrate, greater deposition depth, and increased thickness of the eventually formed metal/semiconductor compound thin film. An amount of metal ions entering the semiconductor substrate can be adjusted by adjusting the substrate bias voltage, so as to adjust the thickness of the eventually formed metal/semiconductor compound.
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