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Abstract

A metal-semiconductor-compound thin film is disclosed, which is formed between a semiconductor layer and a polycrystalline semiconductor layer, the metal-semiconductor-compound thin film having a thickness of about 2˜5 nm, so as to improve a contact between the semiconductor layer and the polycrystalline semiconductor layer. A DRAM storage cell is also disclosed. A metal-semiconductor-compound thin film having a thickness of about 2-5 nm is added between a drain region of a MOS transistor and a polycrystalline semiconductor buffer layer in the DRAM storage cell, so as to enhance read/write speed of the transistor of the DRAM storage cell while preventing excessive increase in leakage current between the drain region and a semiconductor substrate. A method for making a DRAM storage cell is also disclosed. A DRAM storage cell made using the method has a metal-semiconductor-compound thin film, with a thickness controlled at about 2˜5 nm, formed between a drain region of its MOS transitor and a polycrystalline semiconductor buffer layer, so as to enhance the performance of the DRAM storage cell.

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First Claim