CHEMICAL MECHANICAL POLISHING SLURRY
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United States of America Patent
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Issued Date -
Jan 9, 2014
app pub date -
Jun 27, 2011
filing date -
Mar 24, 2011
priority date (Note) -
Abandoned
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Abstract
A chemical mechanical polishing (CMP) slurry used for phase change memory, characterized by comprising polishing particles, oxidizing agents, chelating agents, inhibiting agents, surface active agents, pH adjusting agents/buffering agents and aqueous medium. Compared with the prior art, the present invention provides a chemical mechanical polishing slurry, by which the controllable selectivity of phase change material/bottom dielectric material (1:1 to 180:1) can be achieved and the phase change properties of phase change materials can be maintained after polishing with the polished surface smooth and free from scratch, meeting process requirements of phase change memory.
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