High-Speed Sensing Scheme for Memory

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United States of America Patent

APP PUB NO 20140003160A1
SERIAL NO

13536514

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A sensing circuit for use in a memory including memory cells and at least one bitline coupled with the memory cells includes first and second sense amplifiers and a controller coupled with the sense amplifiers. The first sense amplifier is adapted to read a selected one of the memory cells coupled to the first sense amplifier via a corresponding bitline. The second sense amplifier is adapted to read a selected one of the memory cells coupled to the second sense amplifier via a corresponding bitline. The controller selectively connects one of the first and second sense amplifiers in an active path of the memory in a manner which enables one of the sense amplifiers to be operative in a precharge mode and another of the sense amplifiers to be concurrently operative in a sensing mode during a given memory cycle.

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Patent Owner(s)

Patent OwnerAddress
LSI CORPORATION1621 BARBER LANE MS D-106 MILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Goel, Ankur Haryana, IN 25 609
Trivedi, Manish Ghaziabad, IN 12 109

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