FET TRANSISTOR ON HIGH-RESISTIVITY SUBSTRATE
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United States of America Patent
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Issued Date -
Jan 2, 2014
app pub date -
Jun 28, 2012
filing date -
Jun 28, 2012
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Abandoned
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Abstract
Systems and methods are disclosed for processing radio frequency (RF) signals using one or more FET transistors disposed on or above a high-resistivity region of a substrate. The substrate may include bulk silicon, at least a portion of which has high-resistivity characteristics. For example, the bulk substrate may have a resistivity greater than 500 Ohm*cm, such as around 1 kOhm*cm. In certain embodiments, one or more of the FET devices are surrounded by a low-resistivity implant configured to reduce effects of harmonic and other interference.
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