COMPOSITE SEMIDCONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD
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United States of America Patent
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Issued Date -
Jan 2, 2014
app pub date -
Mar 14, 2012
filing date -
Mar 14, 2011
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Abandoned
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Abstract
According to the present invention, a composite semiconductor substrate (1) for epitaxial growth of a compound semiconductor material (1) comprises a ceramic semiconductor support layer (4), and a single crystalline epitaxial layer (3) formed of the compound semi-conductor material on the ceramic semiconductor support layer.
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