Method Of Manufacturing Gallium Nitride Substrate And Gallium Nitride Substrate Manufactured By The Same
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United States of America Patent
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Issued Date -
Jan 2, 2014
app pub date -
Jun 26, 2013
filing date -
Jun 29, 2012
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Abandoned
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Abstract
A method of manufacturing a gallium nitride (GaN) substrate and a GaN substrate manufactured by the same. The method includes the steps of growing a GaN film on a base substrate and separating the base substrate from the GaN film. The step of growing the GaN film includes forming pits in the GaN film, the pits inducing an inversion domain boundary to be formed inside the GaN film. The GaN substrate can have a predetermined thickness with which it can be handled during layer transfer (LT) processing, and the warping of the GaN substrate can be minimized, thereby preventing cracks due to warping.
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