HETEROJUNCTION OXIDE MEMORY DEVICE WITH BARRIER LAYER
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United States of America Patent
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Issued Date -
Jan 2, 2014
app pub date -
Mar 15, 2013
filing date -
Jul 2, 2012
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Abstract
A resistive memory device is provided that includes a barrier layer in between two metal oxide layers. The barrier layer prevents free flow of oxygen ions between the two metal oxide layers in order to increase the retention period for the data stored in the memory device.
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