HETEROJUNCTION BIPOLAR TRANSISTOR WITH IMPROVED CURRENT GAIN AND A FABRICATION METHOD THEREOF
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United States of America Patent
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Issued Date -
Dec 26, 2013
app pub date -
Jun 22, 2012
filing date -
Jun 22, 2012
priority date (Note) -
Abandoned
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Abstract
A heterojunction bipolar transistor (HBT) with improved current gain and the fabrication method thereof, in which the HBT comprises a substrate, a p-type buffer layer, a sub-collector layer, a collector layer, a base layer, an emitter layer, an emitter cap layer, and an emitter contact layer. Multiple etching processes are used for etching a base electrode contact region and terminated at the base layer. A collector electrode contact region is then formed in the base electrode contact region by an etching process terminated at the sub-collector layer. A base electrode is disposed on the base layer in the base electrode contact region. A collector electrode is disposed on the sub-collector layer in the collector electrode contact region. An emitter electrode is disposed on the emitter layer.
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