DOUBLE ALUMINUM NITRIDE SPACERS FOR NITRIDE HIGH ELECTRON-MOBILITY TRANSISTORS
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United States of America Patent
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Issued Date -
Dec 26, 2013
app pub date -
Jun 7, 2013
filing date -
Jun 7, 2012
priority date (Note) -
Abandoned
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Abstract
An epitaxial structure and a high electron mobility transistor (HEMT) employing the epitaxial structure includes a first spacer layer over a channel layer, a first barrier layer over the first spacer layer, and a second spacer layer over the first barrier layer.
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