RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
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United States of America Patent
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Issued Date -
Dec 19, 2013
app pub date -
Apr 23, 2013
filing date -
Apr 25, 2012
priority date (Note) -
Abandoned
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Abstract
A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, (A) including (A1) including (a0) and (a2), and the resist composition having a Tf temperature of lower than 170° C. (└La01 represents —COO—, —CON(R′)— or a divalent aromatic group, R′ represents a hydrogen atom or a methyl group, Va01 represents a linear alkylene group of at least 3 carbon atoms, A− represents an anion-containing group, Mm+ represents an organic cation, Ya21 represents a single bond or divalent linking group, La21 represents —O—, —COO—, —CON(R′)— or —OCO—, R′ represents a hydrogen atom or a methyl group, and Ra21 represents a lactone-containing group, a carbonate containing group or an —SO2— containing group.
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