MEMORY MANAGEMENT METHOD, AND MEMORY CONTROLLER AND MEMORY STORAGE DEVICE USING THE SAME

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United States of America Patent

APP PUB NO 20130332653A1
SERIAL NO

13585808

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Abstract

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A memory management method adapted to a rewritable non-volatile memory module having a plurality of physical erase units is provided. The operation mode of each physical erase unit is set to include three modes. A first mode indicates all physical program units to be programmable, a second mode and a third mode indicate upper physical program units to be non-programmable, but the third mode is unswitchable to the first or the second mode. The physical erase units are grouped into a first area and a second area. Each physical erase unit in the first area switchably operates in the first or the second mode, and each physical erase unit in the second area operates in the third mode. If a condition is satisfied, a physical erase unit in the first area is grouped to the second area. Thereby, the lifespan of the rewritable non-volatile memory module is prolonged.

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Patent Owner(s)

Patent OwnerAddress
PHISON ELECTRONICS CORPNO 1 QUN YI RD JHUNAN MIAOLI 350

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yeh, Chih-Kang Kinmen County, TW 153 1636

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