METHOD OF DEPOSITION OF Al2O3/SiO2 STACKS, FROM ALUMINIUM AND SILICON PRECURSORS
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United States of America Patent
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Issued Date -
Dec 12, 2013
app pub date -
Dec 15, 2011
filing date -
Feb 7, 2011
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Abandoned
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Abstract
A method of forming an Al2O3/SiO2 stack comprising
- injecting into the reaction chamber, through an ALD process, at least one silicon containing compound selected from the group consisting of:BDEAS Bis(diethylamino)silane SiH2(NEt2)2,BDMAS Bis(dimethylamino)silane SiH2(NMe2)2,BEMAS Bis(ethylmethylamino)silane SiH2(NEtMe)2,DIPAS (Di-isopropylamido)silane SiH3(NiPr2),DTBAS (Di tert-butylamido)silane SiH3(NtBu2);injecting into the reaction chamber an oxygen source selected in the list: oxygen, ozone, oxygen plasma, water, CO2 plasma, N2O plasma;and injecting on said silicon oxide film, through an ALD process, at least one aluminum containing compound selected in the list: Al(Me)3, Al(Et)3, Al(Me)2(OiPr), Al(Me)2(NMe)2 or Al(Me)2(NEt)2.
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